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Contact Material:
The
bonding pads and back contacts of the chips are gold. The beamleads
are solid gold. All packages except the E47, SOT23, SOD323 and 0805
are plated with nickel and gold. The E47 package is nickel plated
only. SOT23 and SOD323 have lead tin solder coating.
Handling:
Aeroflex / Metelics
chips are usually shipped in anti-static plastic chip trays containing
up to 400 units. They may be removed using tweezers or a grounded
vacuum pickup being careful not to damage the active junction area
or metallization. Excessive removal force will cause cracks or chip
outs.
Aeroflex / Metelics
beamlead devices are designed to have exceptional lead strength,
however they are very small and require special handling to assure
that the devices are not mechanically or electrically damaged. Beamlead
devices can be picked up with a very small vacuum pencil or a sharpened
wooden stick such as a Q-tip dipped in isopropyl alcohol.
All
devices require standard ESD handling precautions (grounded wrist
strap, etc) to prevent static damage.
Die
Attach:
- Conductive
silver epoxy - cured at 100 to
125°C
- (100 to 110°C recommended for Tunnels)
- Solder
perform gold (80%) - tin (20%) at about 320°C - (too hot
for Tunnels)
-
Solder perform gold (90%) - germanium (10%) at about 380oC
- (too hot for Tunnels and Schottkys)
Bonding:
- Use
thermocompression bonding - pads are not designed for thermosonic
bonding. The best settings for a specific application are determined
by expermentation, starting with the typical value shown below.
-
For all chips except Tunnels - Wire or Ribbon - base at
210°C, tip at 150°C, tip pressure between 15 and 50 grams
- For
Tunnels - 0.7 mil wire - base at 150°C, capillary
at 150°C, capillary pressure less than 20 grams. A thermocompression
wedge bond is done on the offset bonding pad. Bonding should not
be done directly over junction. The Tunnel diode can not be subjected
to 150°C for more than 5 sec.
- For
beamleads - Thermal compression bonding with a heated wedge
or parallel gap welding can be used to bond beamlead devices to
substrates. In either case the devices are positioned face down
with the beamleads flat on the substrate's metalization and then
the beams are bonded. Care must be taken not to damage the beam
- glass interface with too much lateral stress or by bonding too
close to the chip. Any cracking caused in the glass can put stress
on the diode junction. This stress usually increases the junction
resistance. It is not recommended that beamlead devices be mounted
on a soft substrates (such as Duroid) as temperature variations
can cause excessive expansion or contraction resulting in breakage
of the beamlead device. For thermal compression: base at 180°C,
tip at 220°C, tip pressure 150 grams.
Soldering:
all packaged devices (not chips or beamleads) - 230o
C
for 5 seconds.
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